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The NSBC143ZPDXV6T1G is a dual pre-biased digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SOT-563 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA for both polarities. The device includes internal base resistors with a typical value of 4.7 kOhms and an emitter resistor ratio of 0.1. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, and a maximum saturation voltage of 250 mV at 1 mA collector current. Power dissipation is rated at 500 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific suffix T1G against the manufacturer's latest documentation to confirm RoHS compliance and lead-free status. Confirm availability as distribution channels may vary by region. Ensure the ordering part number matches the exact pinout and electrical specifications required for the design.
Select this component when a complementary pair of pre-biased transistors is needed in a minimal footprint. Compare the 4.7 kOhm base resistance and 0.1 emitter resistor ratio against circuit requirements. Verify that the 50 V rating and 100 mA current capacity exceed the application's peak loads.
This part belongs to the NSBC series of dual digital transistors manufactured by onsemi. It shares the SOT-563 form factor with other variants in the family but differs in internal resistor values and transistor configurations. The Z suffix typically denotes specific resistor ratios within the product line.
Direct substitutes include NSBC143EPDXV6T1G and NSBC143ZPDXV6T5G. Verify pin compatibility and electrical parameters before substitution. Other compatible parts in the SOT-563 package should be evaluated for matching VCEO, IC, and hFE specifications.