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The NSBC143ZPDXV6T5 is a dual digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes built-in biasing resistors with a typical input resistance of 4.7 kOhms and a typical resistor ratio of 1. Key electrical specifications include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, and a maximum saturation voltage of 250 mV at 1 mA base current and 10 mA collector current. Power dissipation is rated at 500 mW, with an operating temperature range spanning from -55 °C to +150 °C.
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Select this component when a complementary NPN/PNP pair is required in a minimal footprint. Ensure the 50 V voltage rating and 100 mA current capacity meet the specific load requirements. Verify that the 4.7 kOhm internal resistor value aligns with the desired drive current and switching speed characteristics for the target application.
This part belongs to the NSBC143 series of pre-biased digital transistors manufactured by onsemi. It is designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity. The SOT-563 package offers thermal and mechanical advantages over larger through-hole alternatives while maintaining robust performance in consumer and industrial electronics.
NSBC143EPDXV6T1G: Complementary dual NPN & PNP configuration with similar electrical ratings.
The typical input resistance is 4.7 kOhms.
The maximum power dissipation is 500 mW.
Yes, it integrates one NPN and one PNP transistor in a single package.