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Product Detailed Parameters
- Description：TRANS PREBIAS NPN/PNP SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSBC143ZPDXV6T5G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP silicon transistor with monolithic bias resistor networks in an SOT-563 package. It features a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The internal resistors are R1 = 4.7 kOhms and R2 = 47 kOhms. DC current gain ranges from 80 to 200, with a maximum power dissipation of 500 mW when both junctions are heated.
Feature Summary
- Integrates complementary NPN and PNP transistors with built-in bias resistors
- Reduces board space by replacing discrete components
- Simplifies circuit design through integrated network
Applications
- Low power surface mount applications
- Digital switching circuits
- Driver circuits for logic interfaces
Procurement Notes
Verify the specific suffix 'G' indicates Pb-Free packaging status as per manufacturer documentation. Confirm the ordering code matches the exact resistor values and package type required for the design. Ensure compatibility with standard SMT reflow processes for the SOT-563 form factor.
Selection Notes
Select this component where complementary NPN/PNP switching is needed in a compact footprint. The specific resistor ratio of approximately 0.1 allows for tailored base drive requirements. Verify thermal constraints against the 500 mW dissipation rating under operating conditions.
Part Context
This device belongs to the NSBC114EPDXV6 series family of dual BRTs. It shares the same SOT-563 package and general electrical characteristics with other members like NSBC114EPDXV6T1G, differing primarily in the internal resistor values and specific transistor configurations.
Replacement Considerations
NSBC143ZPDXV6T1
FAQ
What are the internal resistor values for the NSBC143ZPDXV6T5G?
The device contains a series base resistor (R1) of 4.7 kOhms and a base-emitter resistor (R2) of 47 kOhms.
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.
Does this component contain both NPN and PNP transistors?
Yes, it is a dual Bias Resistor Transistor containing one NPN and one PNP silicon transistor within a single package.
