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The NSBC144EDXV6T1G is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563-6 package. It integrates two NPN transistors with monolithic bias networks, each comprising a series base resistor (R1 = 47 kΩ) and a base-emitter resistor (R2 = 47 kΩ). The device supports a maximum collector-emitter voltage (VCEO) of 50 Vdc and continuous collector current (IC) of 100 mAdc. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 140 at IC = 5.0 mA and VCE = 10 V. Total power dissipation reaches 357 mW for one junction heated and 500 mW for both junctions heated at 25 °C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance and Pb-Free status as stated in the datasheet. Ensure the application environment stays within the specified thermal resistance and power dissipation limits for the selected mounting configuration.
Select this component when a dual NPN configuration with fixed 47 kΩ bias resistors is required. Compare thermal performance requirements against the SOT-563 package limitations. Consider alternative packages like SOT-363 or SOT-963 if different pinout or thermal characteristics are needed for the specific PCB layout.
This part belongs to the DTC144ED family of dual NPN bias resistor transistors. It shares functional similarities with MUN5213DW1 and NSBC144EDP6 but differs in packaging and specific thermal ratings. The NSBC prefix indicates standard commercial grade manufacturing, while NSV denotes automotive-grade variants with unique site control.
Direct substitutes include MUN5213DW1T1G (SOT-363) and NSBC144EDP6T5G (SOT-963), provided pin compatibility and thermal constraints are verified. Cross-package replacements require careful review of pin assignments and thermal resistance values.