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Product Detailed Parameters
- Description：TRANS BRT NPN DUAL 50V SOT563
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The NSBC144EDXV6T5 is a dual NPN digital transistor from onsemi, housed in an SOT-563 package. It integrates two monolithic bias resistor networks with the transistors to simplify circuit design and reduce board space. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total device power dissipation (PD) of 357 mW at 25°C. The internal resistors R1 and R2 are both 47 kOhms. The DC current gain (hFE) has a minimum value of 80 at IC = 5.0 mA and VCE = 10 V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Integrates dual NPN transistors with monolithic bias resistor networks to replace discrete components.
- Designed for low-power surface mount applications where board space is limited.
- Features lead-free solder plating and RoHS compliance.
Applications
- Low power surface mount applications
- Circuit designs requiring simplified biasing networks
- Applications prioritizing reduced component count
Procurement Notes
Verify the specific ordering suffix T5 against official documentation to confirm tape and reel specifications, including part orientation and tape sizes. Ensure compatibility with automated assembly processes by referencing the Tape and Reel Packaging Specifications Brochure BRD801/D for accurate handling requirements.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required. The 47 kOhm resistor values suit specific input impedance needs. Verify that the 50 V collector-emitter voltage and 100 mA current ratings align with the target circuit's operational limits and thermal management capabilities.
Part Context
This device belongs to the NSBC1xxxDXV6 series of preferred dual bias resistor transistors. It shares the SOT-563 package and general architecture with variants like NSBC114EDXV6T5 and NSBC124EDXV6T5, differing primarily in the integrated resistor values and specific marking codes defined in the manufacturer's ordering information table.
Replacement Considerations
Direct substitutes within the same series include NSBC114EDXV6T5 and NSBC124EDXV6T5, provided their respective resistor values match the design requirements. Cross-manufacturer replacements must be evaluated based on pinout compatibility, voltage/current ratings, and thermal characteristics.
FAQ
What are the values of the integrated resistors R1 and R2?
For the NSBC144EDXV6T5, both the series base resistor (R1) and the base-emitter resistor (R2) have a nominal value of 47 kOhms.
What is the maximum power dissipation of the device?
The total device power dissipation is 357 mW when measured with one junction heated at an ambient temperature of 25°C.
Does the device support high-temperature operation?
Yes, the junction and storage temperature range extends up to +150°C, allowing for operation in elevated thermal environments.
