SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSBC144EDXV6T5G is a dual NPN Bias Resistor Transistor (BRT) manufactured by onsemi, housed in an SOT-563 package. It integrates two NPN transistors with monolithic bias resistor networks, replacing discrete components to reduce board space and system cost. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and input resistors of 47 kOhms each. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and automotive qualification requirements if applicable to the target application. Ensure the selected variant matches the required thermal dissipation characteristics for the intended operating environment.
Select this component when a dual NPN configuration with integrated biasing is required. Compare thermal resistance values between SOT-563 and alternative packages like SOT-963 based on available PCB copper area. Verify that the 47 kOhm internal resistor values align with the specific drive requirements of the connected logic or load.
This part belongs to the DTC144ED series of dual NPN Bias Resistor Transistors from onsemi. It shares functional similarities with other BRTs but is distinguished by its specific resistor values and dual NPN topology. The series includes variants in different packages such as SOT-363 and SOT-963 to accommodate various layout constraints.
The device features two internal resistors, R1 and R2, both with a typical value of 47 kOhms.
Yes, devices with the NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
The maximum collector-emitter voltage (VCEO) is rated at 50 Vdc.