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The NSBC144EPDXV6T1 is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP silicon transistor with monolithic bias resistor networks in an SOT-563 package. It features a collector-emitter breakdown voltage of 50 Vdc and a maximum continuous collector current of 100 mAdc for both devices. The integrated resistors are R1 = 47 kΩ and R2 = 47 kΩ. Electrical characteristics include a minimum DC current gain (hFE) of 80 at 5 mA and 10 V, and a maximum collector-emitter saturation voltage of 0.25 Vdc at 10 mA. Total device power dissipation reaches 500 mW when both junctions are heated.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific ordering suffixes such as T1 versus T5 regarding tape and reel pitch. Ensure the procurement matches the exact marking code '13' for this variant.
Select this component when a complementary pair of pre-biased transistors is required. Verify that the 47 kΩ resistor values align with the target circuit impedance. Confirm the SOT-563 package dimensions fit the available PCB footprint constraints.
This part belongs to the NSBC114EPDXV6/D series of dual BRTs. Other variants in this family include NSBC114EPDXV6T1, NSBC124EPDXV6T1, and NSBC114YPDXV6T1, which differ primarily in their internal resistor ratios and configurations while sharing the same package and general electrical ratings.
Direct substitutes include NSBC144EPDXV6T1G. Cross-manufacturer equivalents may exist but require verification of pinout compatibility and electrical parameters against the official datasheet specifications.