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The NSDEMP11XV6T5G is a common anode quad array switching diode designed for ultra-high-speed applications. It features a maximum reverse voltage of 80 Vdc and a forward current rating of 100 mAdc per diode. The device exhibits a peak reverse recovery time of 4.0 ns and a diode capacitance of 3.5 pF at 6.0 V reverse bias. Operating junction temperatures range from -55°C to +150°C, with total device dissipation reaching 500 mW when both junctions are heated.
Verify the specific ordering suffix against official documentation to confirm packaging quantities and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment by referencing the manufacturer's mechanical case outline dimensions. Confirm that the component meets all required thermal derating guidelines for the intended operating environment before finalizing procurement orders.
Select this component when circuit design requires multiple independent switching paths within a minimal footprint. The quad array architecture reduces assembly complexity compared to discrete single diodes. Evaluate thermal resistance parameters carefully if multiple diodes operate simultaneously to ensure junction temperatures remain within safe operational limits under continuous load conditions.
This device belongs to onsemi's epitaxial planar diode family, engineered specifically for high-speed digital and RF applications. The SOT-563 package provides a robust solution for low-power surface mount designs where spatial constraints are critical. It serves as a direct replacement for legacy quad diode arrays requiring similar electrical performance profiles.
NSDEMP11XV6T1 is the non-green variant of this component. Verify pinout compatibility and thermal characteristics when substituting between variants. Ensure that any alternative quad diode array matches the 80V reverse voltage and 4ns recovery time requirements.