NSM11156DW6T1G

Overview

The NSM11156DW6T1G is a dual pre-biased NPN transistor array from onsemi, housed in an SOT-363 (SC-88) surface-mount package. It integrates two NPN transistors with monolithic bias networks, each featuring a series base resistor and a base-emitter resistor. The device supports a maximum collector current of 100 mA and offers a collector-emitter breakdown voltage of 50 V. With a power dissipation rating of 230 mW, it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with built-in biasing resistors for simplified circuit design
• Provides high-density packaging in a compact SOT-363 footprint
• Features robust thermal performance suitable for wide operating temperature ranges

Applications

• General-purpose switching applications
• Driver circuits for logic interfaces
• Signal conditioning stages

Procurement Notes

Verify the specific datasheet version and compliance documentation prior to procurement. Confirm that the SOT-363 package dimensions align with the target PCB layout constraints. Ensure that the thermal management strategy accounts for the 230 mW power dissipation limit under worst-case operating conditions to maintain reliability.

Selection Notes

Select this component when a compact solution for dual NPN switching is required. It is suitable for designs needing integrated base biasing to reduce external component count. Consider the 50 V breakdown voltage and 100 mA current limits to ensure adequate headroom for the intended load requirements.

Part Context

This part belongs to onsemi's NSM series of digital transistors, which are designed to replace multiple discrete components. The series offers various configurations including single, dual, and complementary pairs. These devices are engineered to simplify board space and improve consistency in high-volume consumer and industrial electronics manufacturing.

Replacement Considerations

Cross-reference with MUN5215DW1T1G for similar NPN configurations. Verify pinout compatibility and electrical parameter margins before substitution.