NSM21156DW6T1G

Overview

The NSM21156DW6T1G is a dual complementary pre-biased bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN transistor with a monolithic bias network and one PNP transistor within a single surface-mount package. The device features a maximum collector current of 100 mA for both transistors. Voltage ratings include a maximum collector-emitter breakdown voltage of 50 V for the NPN section and 65 V for the PNP section. The component dissipates up to 230 mW of power and is housed in an SC-88 (SOT-363) package.

Feature Summary

• Integrates one NPN transistor with a built-in bias network and one discrete PNP transistor into a single monolithic structure.
• Provides simplified circuit design by eliminating external base resistors for the NPN configuration.
• Offers complementary switching capabilities with distinct voltage ratings optimized for specific logic levels.

Applications

• General-purpose switching applications requiring compact dual-transistor solutions
• Digital logic interface circuits
• Low-power signal processing stages

Procurement Notes

Verify the current product status before procurement, as this specific part number may be listed as obsolete or discontinued in official catalogs. Confirm availability through authorized distributors or direct manufacturer channels. Ensure that the SC-88 package dimensions align with the target PCB footprint requirements. Cross-reference the latest datasheet revision to confirm pinout compatibility if used in existing designs.

Selection Notes

Select this component when space-constrained designs require two complementary transistors with integrated biasing for the NPN side. The 100 mA current rating suits low-to-medium power switching tasks. Consider the 50 V/65V breakdown limits to ensure adequate margin for the application's operating voltage. The SC-88 package offers a small form factor suitable for high-density board layouts.

Part Context

This device belongs to onsemi’s lineup of pre-biased BJT arrays, designed to reduce component count and assembly time. Pre-biased transistors integrate internal resistors to simplify drive circuitry. The dual complementary configuration allows for efficient push-pull or differential stage implementations in a minimal footprint compared to discrete components.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the product status is noted as obsolete, consult onsemi technical support for recommended next-generation replacements or equivalent cross-reference data from authorized sources.