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The NSM21356DW6T1G is a dual complementary transistor array housed in an SC-88 (SOT-363) surface-mount package. It integrates one NPN pre-biased transistor with a monolithic bias network consisting of two resistors, alongside one PNP transistor. The device features a maximum collector-emitter breakdown voltage of 50V for the NPN and 65V for the PNP, with a maximum collector current of 100mA. Designed for low-power applications in space-constrained environments, it offers efficient switching capabilities within a compact footprint.
Verify component status carefully as this part may be obsolete or discontinued. Contact onsemi customer service or authorized distributors for current availability and lifecycle updates. Ensure compatibility with existing PCB layouts due to the specific SC-88 package dimensions. Request official compliance documents such as Material Composition Declarations if required for regulatory adherence.
Select this component when a combined NPN/PNP solution with integrated biasing is required to reduce external component count. The SC-88 package is ideal for dense board layouts. Verify that the 50V/65V breakdown voltages meet circuit requirements. Consider the 100mA current rating for load handling. Confirm package pinout alignment with design schematics before procurement.
This device belongs to onsemi's discrete transistor family, specifically designed for general-purpose switching and biasing tasks. The NSM21356 series utilizes monolithic integration to simplify circuit design by embedding resistors directly with the NPN transistor. It serves as a compact alternative to discrete resistor-transistor networks, optimizing board space and assembly complexity.
Check for direct substitutes within the BAS21 or similar dual transistor families. Verify pin compatibility and electrical ratings against potential replacements. Consult onsemi documentation for approved cross-reference lists.