NSR15ADXV6T5G

RF Diode Overview

The NSR15ADXV6T5G is a dual RF Schottky barrier diode manufactured by onsemi. It utilizes silicon technology and is housed in an X2-DFN-2 surface-mount package. The device features a single configuration with a maximum repetitive reverse voltage of 30 V and a forward current rating of 1.5 A. Key electrical parameters include a maximum forward voltage of 950 mV at the rated current and a reverse leakage current of 10 µA. The component operates within a temperature range of -55 °C to +150 °C and belongs to the NSR15 series.

RF Diode Feature Summary

• Dual integrated structure for compact circuit design
• Low forward voltage drop for efficient signal handling
• High thermal stability suitable for demanding environments

RF Diode Applications

• RF signal processing circuits
• High-frequency switching applications
• Signal detection and mixing stages

RF Diode Procurement Notes

Verify the exact ordering suffix and manufacturer part number against official onsemi documentation before procurement. Confirm RoHS compliance status and specific tape-and-reel packaging requirements. Ensure the component meets all electrical specifications required for the target RF application design.

RF Diode Selection Notes

Select this component for designs requiring dual Schottky diodes in a minimal footprint. Consider the 1.5 A forward current and 30 V reverse voltage ratings when defining circuit limits. Evaluate the X2-DFN-2 package dimensions for PCB layout constraints and thermal management needs.

RF Diode Part Context

This device is part of the NSR15 series of Schottky barrier diodes from onsemi. The series offers various current and voltage ratings packaged in small form factors. The NSR15ADXV6T5G specifically provides a dual configuration optimized for RF and high-speed digital applications requiring low capacitance and fast switching characteristics.

RF Diode Replacement Considerations

NSR15ADXV6T1 is a similar dual RF Schottky diode from the same manufacturer family.