ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2NPN DUAL 40V 3A 8-SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：3A
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：115mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 1A, 2V
- Power - Max：653mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The NSS40301MDR2G is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It features a surface-mount SOIC-8 package and operates with a maximum DC collector current of 3 A. The device supports a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V, with an emitter-base voltage (VEBO) rating of 7 V. Key electrical parameters include a collector-emitter saturation voltage of 135 mV and a power dissipation capability of 783 mW. The transition frequency (fT) is specified at 100 MHz. The component functions within a temperature range from -55°C to +150°C.
Feature Summary
- Dual NPN configuration in a compact SOIC-8 surface mount package
- Low collector-emitter saturation voltage for efficient switching
- High DC current gain suitable for direct drive applications
- Extended operating temperature range up to 150°C
Applications
- DC-DC converters in portable and battery-powered devices
- Motor control circuits for storage products
- Automotive safety systems such as airbag deployment
- Analog amplifier stages requiring linear gain characteristics
Procurement Notes
Verify the specific suffix against official documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS and halogen-free requirements if mandated by the design. Cross-reference the datasheet revision date to validate thermal resistance values and absolute maximum ratings before finalizing the bill of materials.
Selection Notes
Select this component for low-voltage, high-speed switching applications where low saturation voltage is critical. Compare the 3 A continuous current rating against peak load requirements. Consider the SOIC-8 thermal performance relative to PCB copper area constraints. Verify that the 40 V breakdown voltage exceeds the circuit's maximum transient voltages.
Part Context
This part belongs to the e2PowerEdge series of low VCE(sat) transistors from onsemi. It serves as the NPN counterpart to the PNP NSS40300MDR2G. The series is designed for energy-efficient power management in consumer electronics and automotive systems, emphasizing high current gain and fast switching capabilities.
Replacement Considerations
The NSS40300MDR2G is the complementary PNP device within the same family. For single-transistor replacements, verify pinout compatibility and ensure the substitute meets the 3 A current and 40 V voltage ratings. Check datasheets for equivalent saturation voltage and gain specifications.
