NSS60100DMTTBG

Overview

The NSS60100DMTTBG is a dual PNP bipolar junction transistor (BJT) manufactured by onsemi. It features a silicon technology and is housed in a WDFN6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 1 A with a power dissipation rating of 2.27 W. It exhibits a low collector-emitter saturation voltage of 300 mV and a gain-bandwidth product (fT) of 155 MHz. The DC current gain ranges from a minimum of 90 to a maximum of 140. Operating temperatures span from -55 °C to +150 °C.

Feature Summary

• Dual PNP configuration within a compact WDFN6 surface-mount package
• Low collector-emitter saturation voltage for efficient switching performance
• High thermal stability with a maximum operating temperature of +150 °C
• Designed for general-purpose amplification and switching applications

Applications

• General-purpose signal switching circuits
• Low-voltage amplifier stages
• Logic interface buffers
• Power management control circuits

Procurement Notes

Verify the specific ordering suffix and tape/reel packaging details directly with the manufacturer or authorized distributors before procurement. Confirm that the component status aligns with long-term availability requirements, as lifecycle changes may affect supply continuity. Ensure that the WDFN6 footprint matches the design board layout and that thermal relief plans accommodate the specified power dissipation limits during operation.

Selection Notes

Select this component when a dual PNP configuration is required in a small surface-mount form factor. The 60 V voltage rating suits low-to-medium voltage logic and power applications. Consider the 1 A current capability and 2.27 W power dissipation for thermal management planning. The low saturation voltage makes it suitable for applications requiring minimal voltage drop during conduction states compared to standard bipolar transistors.

Part Context

This part belongs to the NSS60100DMT series of dual bipolar transistors from onsemi. These devices are designed for high-density PCB layouts where space is constrained. The WDFN6 package provides efficient heat dissipation relative to its size. The series targets cost-sensitive consumer and industrial electronics requiring reliable switching performance in compact designs.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the dual PNP topology, WDFN6 package dimensions, and equivalent electrical ratings including VCEO, IC, and thermal characteristics.