NSS60101DMTTBG

Overview

The NSS60101DMTTBG is a single NPN silicon bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 60 V and a maximum collector-base voltage (VCBO) of 60 V, with an emitter-base voltage (VEBO) rating of 6 V. The device supports a maximum DC collector current of 1 A and has a power dissipation capability of 2.27 W. Key electrical characteristics include a low collector-emitter saturation voltage of 130 mV and a transition frequency (fT) of 180 MHz. It operates within a temperature range from -55 °C to +150 °C and is supplied in surface-mount packaging.

Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• High transition frequency suitable for medium-speed applications
• Extended operating temperature range up to 150 °C

Applications

• General-purpose switching circuits
• Driver stages for power loads
• Logic interface buffers

Procurement Notes

Verify the complete part number including the suffix DMTTBG to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Cross-reference the specific datasheet revision to validate electrical parameters against design requirements. Ensure sourcing channels provide authentic components from authorized distributors to maintain quality standards.

Selection Notes

Select this component when a 60 V NPN transistor with 1 A current capacity is required. The low VCE(sat) makes it suitable for applications prioritizing conduction loss reduction. Compare fT specifications if high-frequency operation is critical. Verify thermal management capabilities align with the 2.27 W power dissipation limit in the chosen package configuration.

Part Context

This device belongs to the NSS60101DMT series of low VCE(sat) NPN transistors from onsemi. The series is designed for general-purpose switching applications requiring reliable performance at moderate voltages and currents. The DMTTBG suffix indicates specific tape-and-reel packaging for automated assembly processes.

Replacement Considerations

Direct substitutes include other 60 V, 1 A NPN transistors with comparable VCE(sat) and fT specifications. Verify pinout compatibility and thermal resistance values before substitution. Consider equivalent parts from other manufacturers only if electrical parameters meet or exceed the original specifications.