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The NST30010MXV6T1G is a dual matched general-purpose PNP transistor housed in an ultra-small SOT-563 package. It consists of two highly matched devices within a single component, eliminating the need for costly trimming. Key electrical parameters include a collector-emitter voltage (VCEO) of -30 V, a continuous collector current (IC) of -100 mA, and a DC current gain (hFE) ranging from 270 to 800 at IC = -10 mA. The base-emitter voltage matching is specified to 2 mV, with current gain matching to 10%. Thermal characteristics show a total device dissipation of 500 mW when both devices are heated.
Verify the specific ordering suffix to ensure correct packaging and qualification level. The NSV prefix indicates automotive-grade components requiring unique site and control change requirements. Confirm lead times and availability directly with authorized distributors as supply conditions fluctuate. Ensure compliance with RoHS and Pb-Free standards during procurement.
Select this component when precise parameter matching between two transistors is required without external calibration. The SOT-563 package is ideal for space-constrained designs. Consider the thermal resistance values if multiple devices operate simultaneously. Verify that the -30 V voltage rating meets the circuit requirements.
This part belongs to onsemi's line of dual matched general-purpose transistors. It shares the same internal structure and performance characteristics as the NSVT30010MXV6T1G, differing primarily in the NSV prefix which denotes automotive qualification and specific manufacturing controls. Both are housed in the SOT-563 package.
Public confirmed substitute part numbers: NSVT30010MXV6T1G.