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The NST3904DXV6T1 is a dual NPN bipolar junction transistor manufactured by onsemi, housed in an SOT-563-6 surface-mount package. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device operates within a temperature range of -55°C to +150°C and has a power dissipation capacity of 500 mW. Key electrical parameters include a collector-base voltage of 40 V, an emitter-base voltage of 5 V, and a minimum DC current gain (hFE) of 60. The transition frequency is specified at 250 MHz, with a collector-emitter saturation voltage of 400 mV.
Verify the exact suffix against official manufacturer documentation, as standard distribution often utilizes NST3904DXV6T1G. Confirm RoHS compliance status and specific tape-and-reel quantities directly with authorized distributors or the manufacturer to ensure alignment with project requirements.
Select this component when a dual NPN topology is required in an SOT-563 package. Ensure the 40V voltage rating and 200mA current limit meet circuit demands. Compare hFE minimums and saturation voltages against alternative dual BJT packages if board space permits other form factors.
This part belongs to the NST3904DXV6 series of dual general-purpose transistors. It serves as a complementary counterpart to PNP variants like the NST3906DXV6T1G, enabling push-pull or differential amplifier configurations within a single six-pin surface-mount package.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with NSVT3904DXV6T1G or MBT3904DW1T1H only through official cross-reference data sheets.