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The NST3946DP6T5G is a dual complementary bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-963 surface-mount package. The device supports a maximum collector current of 200 mA and withstands a collector-emitter voltage of 40 V. Key electrical characteristics include a transition frequency of 300 MHz for the NPN section and 250 MHz for the PNP section, with a power dissipation rating of 150 mW. It operates reliably across a temperature range from -55°C to +150°C.
Verify the specific suffix DP6T5G against official onsemi documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure that the SOT-963 footprint matches your PCB design constraints. Cross-reference thermal resistance values if operating near the maximum power dissipation limit of 150 mW. Confirm RoHS compliance status through the manufacturer's material declaration.
Select this component when space-constrained designs require matched complementary pairs. The SOT-963 package offers a smaller footprint compared to discrete dual packages. Consider the 200 mA current limit and 40 V voltage rating during circuit planning. Evaluate thermal management requirements given the 150 mW dissipation capability in small outline packages.
This part belongs to onsemi's general-purpose BJT array portfolio. It serves as a compact alternative to using separate discrete NPN and PNP transistors. The dual configuration simplifies board layout and reduces component count in complementary circuits. It is commonly used in consumer electronics and industrial control systems requiring small form-factor switching solutions.
MBT3946DW1T2G: Complementary dual BJT in SOT-363 package; verify pinout differences.