NST3946DP6T5G

NST3946DP6T5G

$0.26
  • Description:TRANS NPN/PNP 40V 200MA SOT-963
  • Series:-

SKU:b6303458ac04 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 40V 200MA SOT-963
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:350mW
  • Frequency - Transition:200MHz, 250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-963
  • Supplier Device Package:SOT-963
  • Grade:-
  • Qualification:-

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NST3946DP6T5G

Overview

The NST3946DP6T5G is a dual complementary bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-963 surface-mount package. The device supports a maximum collector current of 200 mA and withstands a collector-emitter voltage of 40 V. Key electrical characteristics include a transition frequency of 300 MHz for the NPN section and 250 MHz for the PNP section, with a power dissipation rating of 150 mW. It operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a compact dual configuration
  • Designed for high-speed switching applications with specified transition frequencies
  • Capable of operating at elevated junction temperatures up to 150°C

Applications

  • General-purpose signal switching circuits
  • Low-power logic interface stages
  • Complementary amplifier configurations

Procurement Notes

Verify the specific suffix DP6T5G against official onsemi documentation to confirm pinout compatibility and tape-and-reel specifications. Ensure that the SOT-963 footprint matches your PCB design constraints. Cross-reference thermal resistance values if operating near the maximum power dissipation limit of 150 mW. Confirm RoHS compliance status through the manufacturer's material declaration.

Selection Notes

Select this component when space-constrained designs require matched complementary pairs. The SOT-963 package offers a smaller footprint compared to discrete dual packages. Consider the 200 mA current limit and 40 V voltage rating during circuit planning. Evaluate thermal management requirements given the 150 mW dissipation capability in small outline packages.

Part Context

This part belongs to onsemi's general-purpose BJT array portfolio. It serves as a compact alternative to using separate discrete NPN and PNP transistors. The dual configuration simplifies board layout and reduces component count in complementary circuits. It is commonly used in consumer electronics and industrial control systems requiring small form-factor switching solutions.

Replacement Considerations

MBT3946DW1T2G: Complementary dual BJT in SOT-363 package; verify pinout differences.

NST3946DP6T5GNST3946DP6T5G
$0.26
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