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The NST3946DXV6T1 is a dual general-purpose transistor featuring one NPN and one PNP device housed in an SOT-563 surface-mount package. It provides a collector-emitter voltage of 40 Vdc, a continuous collector current of 200 mAdc, and a total power dissipation of 500 mW when both junctions are heated. The DC current gain ranges from 30 to 300 depending on the operating point. Thermal resistance from junction to ambient is 250 °C/W under dual-junction heating conditions.
Verify the specific ordering suffix T1 against official documentation to confirm the 4 mm pitch tape and reel shipping configuration. Confirm RoHS compliance status through the manufacturer's current product specifications before procurement.
Select this component for designs requiring a matched NPN/PNP pair in a minimal footprint. Ensure the application operates within the 500 mW thermal dissipation limit and respects the -55°C to +150°C junction temperature range.
This device is a spin-off of popular three-leaded SOT-23/SOT-323 devices, adapted into a six-leaded SOT-563 package. It belongs to the NST3946DXV6 series manufactured by onsemi.
The NST3946DXV6T5 is a related variant with a 2 mm pitch tape and reel configuration. Verify pinout compatibility and electrical parameters before substitution.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 40 Vdc for the NPN device and -40 Vdc for the PNP device.
The noise figure for the NPN transistor is typically 5.0 dB at VCE = 5.0 Vdc, IC = 100 µAdc, RS = 1.0 kΩ, and f = 1.0 kHz.
By housing two discrete devices in one package, it reduces board space requirements and component count, simplifying the overall circuit layout.