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The NST3946DXV6T1G is a dual bipolar junction transistor (BJT) array manufactured by onsemi, integrating one NPN and one PNP transistor within a single SOT-563-6 surface-mount package. The device supports a maximum continuous collector current of 200 mA and operates with a collector-emitter voltage (VCEO) of 40 V. Key electrical specifications include a collector-base voltage (VCBO) ranging from 40 V to 60 V and an emitter-base voltage (VEBO) between 5 V and 6 V. Power dissipation is rated at 500 mW, with a gain-bandwidth product (fT) of 300 MHz for the NPN section and 250 MHz for the PNP section. The component functions reliably across an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix T1G against the manufacturer's latest documentation to confirm packaging details and compliance status. Confirm availability through authorized channels as distribution status may vary. Ensure the procurement source provides valid traceability and authenticity guarantees for this semiconductor component.
Select this component when a matched NPN/PNP pair is required in a small footprint. Compare the 40 V VCEO rating against circuit requirements. Evaluate the 500 mW power dissipation limit relative to thermal management constraints. Consider the SOT-563-6 package dimensions for PCB layout compatibility.
This part belongs to the NST3946DXV6 series of dual BJT arrays. It shares functional similarities with other onsemi dual transistors like the SMBT3946DW1T1G, though package types differ. The NST3946DXV6T1G specifically utilizes the SOT-563-6 form factor, distinguishing it from smaller packages like SOT-363 or larger alternatives.
Publicly confirmed substitute part numbers are not available in the provided data. Verify pinout compatibility and electrical parameters before considering any alternative components from different manufacturers.