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The NSTB1004DXV5T1 is a dual common base-collector bias resistor transistor (BRT) manufactured by onsemi. It integrates an NPN and a PNP transistor with monolithic biasing networks into a single SOT-553 surface-mount package. The device includes a series base resistor and a base-emitter resistor for each transistor, designed to replace discrete components and simplify circuit layouts. Key electrical ratings include a collector-emitter voltage of 50 Vdc for the NPN and -40 Vdc for the PNP. Maximum collector currents are specified at 100 mAdc for the NPN and -200 mAdc for the PNP. Thermal characteristics define a total device power dissipation of 500 mW with two junctions heated at 25°C ambient temperature.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct tape-and-reel configuration and compliance standards. Confirm that the SOT-553 package variant matches the intended PCB footprint and thermal management requirements for the target application environment.
Select this component when a complementary pair of biased transistors is required in a minimal surface-mount package. Ensure the 50 Vdc and -40 Vdc voltage ratings align with the circuit's operational limits. Consider the integrated resistance values if precise biasing currents are critical, as these are fixed within the device structure.
This part belongs to the NSTB series of dual bias resistor transistors from onsemi. It shares functional similarities with other devices in the family, such as the NSTB1002DXV5T1G and NSTB1005DXV5T1G, which also utilize the SOT-553 package. These components are engineered to provide cost-effective and space-saving alternatives to discrete transistor arrays in digital logic applications.
Compatible substitutes include the NSTB1002DXV5T1G and NSTB1005DXV5T1G. Verify pinout compatibility and exact resistance values before substitution, as internal biasing networks may differ between specific model numbers within the same package type.