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Product Detailed Parameters
- Description：COMPLEMENTARY BIPOLAR DIGITAL TR
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：1 NPN, 1 PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：357mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：SOT-553
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Overview
The NSTB1005DXV5T5 is a dual common base-collector bias resistor transistor (BRT) manufactured by onsemi. It integrates an NPN and a PNP transistor with monolithic biasing networks into a single SOT-553 package. The NPN device features a collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The complementary PNP device supports a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Total power dissipation reaches 500 mW at 25°C with both junctions heated, while the thermal resistance from junction to ambient is 250 °C/W under the same conditions. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Integrates NPN and PNP transistors with built-in series base and base-emitter resistors to replace discrete components.
- Utilizes compact SOT-553 surface-mount packaging for space-constrained low-power applications.
- Simplifies circuit design by eliminating external biasing network components.
Applications
- Low-power surface mount digital switching circuits
- Space-constrained printed circuit board layouts
- General-purpose transistor replacement in embedded systems
Procurement Notes
Verify the specific suffix T5 against official datasheets to confirm pinout and electrical characteristics match the required design specifications. Ensure the component meets RoHS compliance standards if mandated by the target application regulations. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability before procurement.
Selection Notes
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. The SOT-553 package suits applications where board real estate is limited. Verify that the 50 Vdc NPN and -40 Vdc PNP voltage ratings align with the system's operating voltages. Consider the 100 mAdc and -200 mAdc current limits for load requirements.
Part Context
This device belongs to the NSTB1002/1005 series of dual BRTs from onsemi. These components are designed to simplify biasing networks by combining two transistors and their associated resistors into one package. The series targets low-power digital applications requiring compact solutions.
Replacement Considerations
Publicly confirmed substitute part numbers include NSTB1002DXV5T1G and EMC2DXV5T1G. Verify pin compatibility and electrical parameters before substitution.
FAQ
What is the maximum collector-emitter voltage for the NPN transistor?
The maximum collector-emitter voltage for the NPN transistor is 50 Vdc.
What is the total power dissipation capability at 25°C?
The total power dissipation is 500 mW at 25°C when both junctions are heated.
Does the device include external resistors?
No, the device includes monolithic biasing resistors integrated within the package.
