NSTB60BDW1T1

NSTB60BDW1T1

$0.05
  • Description:TRANS NPN PREBIAS/PNP SOT363
  • Series:-

SKU:b45f881bbef4 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/PNP SOT363
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Transistor Type:1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 120 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:140MHz
  • Power - Max:250mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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NSTB60BDW1T1

Overview

The NSTB60BDW1T1 is a complementary pre-biased bipolar junction transistor array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SC-88 (SC70-6/SOT-363) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. Internal biasing resistors are included to facilitate direct drive from logic outputs. The unit features a transition frequency of 140MHz and a total power dissipation rating of 250mW, designed for efficient space-constrained circuit implementations.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in biasing resistors in a compact dual configuration
  • Enables simplified driver interface by eliminating external base resistor requirements for logic-level control
  • Utilizes a low-profile surface-mount package optimized for high-density printed circuit board layouts

Applications

  • Logic level translation circuits requiring complementary switching actions
  • Driver stages for small-signal loads controlled by microcontroller or digital logic outputs
  • Complementary push-pull output buffers in portable electronic devices

Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets required environmental standards and RoHS compliance status prior to integration into production designs.

Selection Notes

Select this component when a matched NPN/PNP pair with integrated biasing is required in a minimal footprint. Ensure the 150mA current limit and 50V voltage rating align with the target application load conditions. Consider thermal management capabilities given the 250mW power dissipation constraint in the specified package.

Part Context

This component belongs to the NST series of pre-biased transistor arrays produced by onsemi. These devices are engineered to replace discrete resistor-transistor combinations, reducing assembly complexity and board area. The specific model utilizes standard silicon technology suitable for general-purpose signal processing and switching tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers' offerings.

NSTB60BDW1T1NSTB60BDW1T1
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