SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSTB60BDW1T1 is a complementary pre-biased bipolar junction transistor array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SC-88 (SC70-6/SOT-363) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. Internal biasing resistors are included to facilitate direct drive from logic outputs. The unit features a transition frequency of 140MHz and a total power dissipation rating of 250mW, designed for efficient space-constrained circuit implementations.
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets required environmental standards and RoHS compliance status prior to integration into production designs.
Select this component when a matched NPN/PNP pair with integrated biasing is required in a minimal footprint. Ensure the 150mA current limit and 50V voltage rating align with the target application load conditions. Consider thermal management capabilities given the 250mW power dissipation constraint in the specified package.
This component belongs to the NST series of pre-biased transistor arrays produced by onsemi. These devices are engineered to replace discrete resistor-transistor combinations, reducing assembly complexity and board area. The specific model utilizes standard silicon technology suitable for general-purpose signal processing and switching tasks.
Publicly confirmed substitute part numbers are not available in the provided reference data. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers' offerings.