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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 6-WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：390mV @ 200mA, 2A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 2V
- Power - Max：-
- Frequency - Transition：155MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-WDFN Exposed Pad
- Supplier Device Package：6-WDFN (2x2)
- Grade：-
- Qualification：-
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Overview
The NSV20200DMTWTBG is a dual NPN bipolar junction transistor (BJT) from onsemi's e2PowerEdge series, housed in a compact WDFN-6 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 20 V and a maximum DC collector current of 2 A. The device exhibits a low collector-emitter saturation voltage (VCE(sat)) ranging from 82 mV to 135 mV depending on drive conditions, with a power dissipation capability of up to 740 mW. Designed for high-speed switching, it offers a gain-bandwidth product (fT) of at least 155 MHz and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual NPN configuration in a single micro-package for space-constrained designs
- Ultra-low saturation voltage for enhanced energy efficiency in low-voltage applications
- High current gain enabling direct drive from PMU control outputs
- Robust thermal performance suitable for high-density surface-mount layouts
Applications
- DC-DC converters in portable and battery-powered devices
- Power management circuits in cellular phones and PDAs
- Low-voltage motor control in storage drives
- Automotive safety systems such as airbag deployment modules
Procurement Notes
Verify the specific suffix 'WTBG' against official documentation to confirm tape-and-reel packaging specifications and moisture sensitivity level. Ensure compatibility with automated pick-and-place equipment by checking the reel dimensions and leader/trailer requirements. Cross-reference the date code and lot traceability data to meet quality standards for automotive or industrial deployments.
Selection Notes
Select this component when dual NPN functionality is required in a minimal footprint without sacrificing current handling capabilities. The low VCE(sat) makes it superior to standard transistors for maintaining efficiency in battery-operated systems. Consider the WDFN-6 package thermal resistance if operating near the maximum power dissipation limit in enclosed environments.
Part Context
This part belongs to onsemi's e2PowerEdge family, which specializes in low VCE(sat) transistors for efficient energy control. The series targets applications where power loss in switching elements directly impacts battery life or thermal management. The dual configuration reduces board space compared to using two discrete single transistors.
Replacement Considerations
Check for pin-compatible alternatives within the NSS20200DM or NSS20201DM series. Verify that substitute parts maintain the same VCEO, IC, and VCE(sat) specifications to ensure circuit performance remains unchanged. Confirm package integrity and thermal characteristics match the original design constraints.
