NSVB114YPDXV6T1G

NSVB114YPDXV6T1G

$0.09
  • Description:TRANS BRT 50V 100MA SOT563
  • Series:-

SKU:d151b49cb081 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS BRT 50V 100MA SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

Download product information

NSVB114YPDXV6T1G

Overview

The NSVB114YPDXV6T1G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP transistor in an SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes typical input resistors of 10 kOhms with a resistance ratio of 0.21. DC current gain (hFE) ranges from 80 to 140. Power dissipation is rated at 357 mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors to simplify circuit design.
  • Provides high current gain for efficient switching applications.
  • Designed for surface mount installation in compact SOT-563-6 packaging.

Applications

  • General-purpose switching circuits
  • Logic level translation interfaces
  • Driver stages for low-power loads

Procurement Notes

Verify the specific suffix 'Y' against the manufacturer's official datasheet to confirm the exact resistor values and hFE binning, as ordering suffixes define functional variations. Ensure the SOT-563-6 footprint matches the target PCB layout. Confirm RoHS compliance status through the latest product release notes or component specifications provided by onsemi before finalizing procurement.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. The 10 kOhm input resistance offers a standard balance between drive current and power consumption. Verify that the 50 V voltage rating and 100 mA current capacity exceed the application's peak requirements. Consider the thermal performance given the 357 mW dissipation limit in the small package.

Part Context

This part belongs to the NSBC114 series of digital transistors designed to replace discrete transistor-resistor networks. It simplifies board space and assembly costs by combining active and passive components into a single semiconductor die. The series targets applications requiring reliable switching with reduced external component count.

Replacement Considerations

NSBC114YPDXV6T1G

NSVB114YPDXV6T1GNSVB114YPDXV6T1G
$0.09
Buy Now