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The NSVB114YPDXV6T1G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP transistor in an SOT-563-6 surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes typical input resistors of 10 kOhms with a resistance ratio of 0.21. DC current gain (hFE) ranges from 80 to 140. Power dissipation is rated at 357 mW, operating within a temperature range of -55°C to +150°C.
Verify the specific suffix 'Y' against the manufacturer's official datasheet to confirm the exact resistor values and hFE binning, as ordering suffixes define functional variations. Ensure the SOT-563-6 footprint matches the target PCB layout. Confirm RoHS compliance status through the latest product release notes or component specifications provided by onsemi before finalizing procurement.
Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. The 10 kOhm input resistance offers a standard balance between drive current and power consumption. Verify that the 50 V voltage rating and 100 mA current capacity exceed the application's peak requirements. Consider the thermal performance given the 357 mW dissipation limit in the small package.
This part belongs to the NSBC114 series of digital transistors designed to replace discrete transistor-resistor networks. It simplifies board space and assembly costs by combining active and passive components into a single semiconductor die. The series targets applications requiring reliable switching with reduced external component count.
NSBC114YPDXV6T1G