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Product Detailed Parameters
- Description：TRANS PREBIAS 2PNP 50V SOT563-6
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSVBA114EDXV6T1G is a dual PNP bipolar pre-biased digital transistor manufactured by onsemi. It integrates two PNP transistors with internal biasing resistors in a compact SOT-563-6 surface-mount package. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Each transistor includes an input resistor of 10 kOhms, facilitating direct interface with logic outputs. The component operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 500 mW.
Feature Summary
- Integrates dual PNP transistors with built-in biasing resistors for simplified circuit design
- Provides high DC current gain with a minimum hFE of 80
- Supports wide operating temperature range suitable for demanding environments
Applications
- Logic level shifting between different voltage domains
- Switching applications in consumer electronics
- Interface circuits for microcontrollers and general-purpose I/O expansion
Procurement Notes
Verify the specific suffix 'EDXV6' against official manufacturer documentation to confirm exact electrical characteristics and pinout configuration. Ensure compatibility with standard SOT-563-6 footprint requirements during PCB layout. Confirm RoHS compliance status through current datasheets before finalizing procurement specifications.
Selection Notes
Select this component when a dual PNP configuration with integrated base resistors is required to reduce board space and component count. The 10 kOhm input resistance offers a balanced trade-off between drive current requirements and switching speed. Consider the 500 mW power dissipation limit for thermal management in dense layouts.
Part Context
This part belongs to the NSVBA series of pre-biased bipolar transistors from onsemi. These devices are designed to replace discrete transistor and resistor networks, simplifying assembly and improving reliability. The series provides various configurations and resistance values to suit diverse application needs.
Replacement Considerations
NSBA114YDXV6T1G
FAQ
What is the typical input resistance value for each transistor?
The typical input resistance for each PNP transistor in this dual configuration is 10 kOhms.
What is the maximum power dissipation rating?
The maximum power dissipation (Pd) for the NSVBA114EDXV6T1G is 500 mW.
