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The NSVBA114YDXV6T1G is a dual digital transistor manufactured by onsemi, featuring two PNP transistors integrated with monolithic bias resistor networks. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of -100 mA. The device includes typical base resistors of 10 kOhms and an emitter-base resistor ratio of 0.021. Packaged in a SOT-563-6 surface-mount case, it supports a power dissipation of 357 mW and functions within a temperature range of -55 C to +150 C.
Verify the complete part number including the G suffix for RoHS compliance when ordering. Confirm the specific tape and reel packaging configuration required for automated assembly lines. Ensure the supplier provides official datasheets matching the NSBA114YDXV6 series specifications to guarantee electrical parameter consistency.
Select this component when a compact dual PNP solution with integrated biasing is required. Compare the 10 kOhm base resistance against circuit drive requirements. Evaluate the SOT-563 package thermal characteristics against the 357 mW power dissipation limit for the intended operating environment.
This component belongs to the NSBA114YDXV6 series of Bias Resistor Transistors (BRTs). It serves as a complementary counterpart to NPN variants like the NSBC114YDXV6T1G. The series is designed to streamline digital switching designs by consolidating transistor and resistor functions into a single small-outline package.
Direct substitutes include other dual PNP BRTs in SOT-563 packages with similar 50V ratings and 100mA currents. Verify pinout compatibility and resistor values before substitution.