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The NSVBC114EDXV6T1G is a dual NPN bias resistor transistor manufactured by onsemi. It integrates two NPN transistors with built-in bias resistors in a compact SOT-563-6 surface-mount package. The device features a collector-emitter maximum voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Typical input resistance is specified at 10 kOhms, with a typical resistor ratio of 1. The minimum DC current gain (hFE) is 80. Power dissipation reaches 357 mW, operating within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official onsemi documentation to ensure correct binning and tape/reel specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. Ensure the 50 V voltage rating and 100 mA current capacity align with the target application's electrical demands. Consider the SOT-563-6 footprint constraints during PCB layout planning to accommodate the specific pinout arrangement defined in the datasheet.
This part belongs to the NSBC series of digital transistors from onsemi, designed for high-density integration. It serves as a complementary solution to other variants in the family, offering specific resistance ratios tailored for distinct logic interface requirements. The series supports modern manufacturing trends by replacing discrete resistor-transistor networks with single-package solutions.
The typical input resistance is 10 kOhms.
The provided documentation does not specify AEC-Q101 qualification for this specific part number.