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The NSVBC114EPDXV6T1G is a dual pre-biased digital transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor within a single compact component. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal biasing resistors are typically set to 10 kOhms for both base and emitter connections. The unit offers a power dissipation rating of 500 mW and operates reliably across a temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and internal resistor values. Confirm RoHS compliance status as legacy variants may differ. Check for active production status or obsolescence notices before finalizing procurement plans.
Select this component when space constraints require a dual-transistor solution with integrated biasing. Ensure the required gain and saturation voltage specifications align with the load requirements. Verify that the thermal management capabilities of the PCB layout support the specified power dissipation limits under operating conditions.
This part belongs to the NSBC114 series of dual pre-biased transistors. It serves as a lead-free compliant variant of the NSBC114EPDXV6T1. The series is designed to replace discrete resistor and transistor combinations, reducing board space and assembly complexity in modern electronic designs.
Direct substitutes include the NSBC114EPDXV6T1G. Cross-reference with other manufacturers offering identical SOT-563 dual NPN/PNP configurations if supply chain constraints exist.