NSVBC114EPDXV6T1G

NSVBC114EPDXV6T1G

$0.09
  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-

SKU:856fd0a25b74 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP 50V SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSVBC114EPDXV6T1G

Overview

The NSVBC114EPDXV6T1G is a dual pre-biased digital transistor manufactured by onsemi, housed in an SOT-563 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor within a single compact component. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal biasing resistors are typically set to 10 kOhms for both base and emitter connections. The unit offers a power dissipation rating of 500 mW and operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in biasing resistors
  • Designed for high-density surface-mount applications via the SOT-563 package
  • Provides simplified circuit design through integrated pre-biasing components

Applications

  • General-purpose switching circuits requiring complementary logic levels
  • Driver stages for low-power loads in consumer electronics
  • Interface buffering between microcontrollers and peripheral devices

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and internal resistor values. Confirm RoHS compliance status as legacy variants may differ. Check for active production status or obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when space constraints require a dual-transistor solution with integrated biasing. Ensure the required gain and saturation voltage specifications align with the load requirements. Verify that the thermal management capabilities of the PCB layout support the specified power dissipation limits under operating conditions.

Part Context

This part belongs to the NSBC114 series of dual pre-biased transistors. It serves as a lead-free compliant variant of the NSBC114EPDXV6T1. The series is designed to replace discrete resistor and transistor combinations, reducing board space and assembly complexity in modern electronic designs.

Replacement Considerations

Direct substitutes include the NSBC114EPDXV6T1G. Cross-reference with other manufacturers offering identical SOT-563 dual NPN/PNP configurations if supply chain constraints exist.

NSVBC114EPDXV6T1GNSVBC114EPDXV6T1G
$0.09
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