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Product Detailed Parameters
- Description：DUAL NPN BIPOLAR DIGITAL TRANSIS
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：357mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSVBC114TDXV6T1G is a dual NPN Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-563 package. It integrates two NPN transistors with monolithic bias networks, each comprising a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-emitter voltage of 50 Vdc, continuous collector current of 100 mAdc, and total device dissipation of 500 mW when both junctions are heated. The typical input resistance R1 is 10 kOhms. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Integrates dual NPN transistors with monolithic bias resistors to replace discrete components
- Reduces board space and component count by combining transistor and bias network functions
- AEC-Q101 qualified and PPAP capable for automotive applications
Applications
- Automotive logic switching circuits
- General-purpose digital switching applications
- Embedded systems requiring simplified biasing
Procurement Notes
Verify the specific ordering suffix 'NSV' indicates AEC-Q101 qualification and PPAP capability as stated in the datasheet. Confirm the package type matches the design requirements, as this part is supplied in SOT-563. Ensure compliance with RoHS and halogen-free specifications during procurement validation.
Selection Notes
Select this component when dual NPN switching with integrated biasing is required in a compact SOT-563 footprint. Consider the 50 V collector-emitter voltage and 100 mA continuous current limits for circuit design. Verify thermal dissipation requirements against the 500 mW rating under relevant operating conditions.
Part Context
This part belongs to the DTC114TD family of dual NPN bias resistor transistors. It shares functional similarities with MUN5215DW1 and NSBC114TDXV6 but is distinguished by its automotive-grade qualification prefix and specific packaging configuration.
Replacement Considerations
Direct substitutes include NSBC114TDXV6T1G and MUN5215DW1T1G. Verify pinout compatibility and electrical ratings before substitution.
FAQ
What is the typical value of the internal base resistor R1?
The typical value of the series base resistor R1 is 10 kOhms.
Is this component suitable for automotive applications?
Yes, the NSV prefix indicates it is AEC-Q101 qualified and PPAP capable for automotive applications.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
