SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NSVBC114YPDXV65G is a complementary bipolar digital transistor array manufactured by onsemi. It integrates one NPN and one PNP pre-biased transistor within a single SOT-563-6 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Typical input base resistors are specified at 10 kOhms, with a typical resistor ratio of 0.21. DC current gain (hFE) minimums range from 80 to 140. Power dissipation is rated at 357 mW, supporting an operating temperature range from -55°C to +150°C.
Verify component status carefully as this specific part number may be obsolete or discontinued. Confirm availability through authorized distributors or secondary market suppliers like Rochester Electronics. Ensure the ordering suffix matches required specifications, as variations exist within the family. Cross-reference datasheets for electrical equivalence if sourcing alternatives.
Select this component when space constraints require integrating both NPN and PNP switching functions. The pre-biased configuration reduces external component count compared to discrete solutions. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements of the target application circuit.
This device belongs to the NSBC114 series of complementary digital transistors. It serves as a consolidated solution for applications requiring paired NPN/PNP switching elements. The SOT-563-6 package allows for automated assembly and reduced board footprint compared to individual discrete components.
Public confirmed substitute part numbers include NSBC114YPDXV6T1G and NSBC114TDXV6T1G. Verify pinout compatibility and electrical parameters before substitution.