NSVBC114YPDXV6T1G

$0.30

Description：TRANS PREBIAS NPN/PNP 50V SOT563
Series：-

SKU:3590bf879f20 Category: Bipolar Transistor Arrays, Pre-Biased Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN/PNP 50V SOT563
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)：100mA
Voltage - Collector Emitter Breakdown (Max)：50V
Resistor - Base (R1)：10kOhms
Resistor - Emitter Base (R2)：47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
pa_vce-saturation-max-ib-ic：
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：500mW
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563

Download product information

NSVBC114YPDXV6T1G

Overview

The NSVBC114YPDXV6T1G is a dual digital transistor from onsemi, integrating one NPN and one PNP transistor with monolithic bias resistor networks in a SOT-563-6 package. It features a typical input resistance of 10 kOhms and a typical resistor ratio of 0.21. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 357 mW. The DC collector/base gain (hfe) minimums are specified as 80 for the NPN and 140 for the PNP. Operating temperature ranges from -55 C to +150 C.

Feature Summary

Integrates complementary NPN and PNP transistors with built-in bias resistors
Reduces board space and component count by replacing discrete transistor-resistor networks
Designed for surface mount applications in compact electronic circuits

Applications

General-purpose switching applications requiring complementary logic levels
Driver circuits for low-power loads where space optimization is critical
Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the exact part number suffix against official manufacturer documentation to ensure correct configuration. Confirm RoHS compliance status through the specific datasheet provided by onsemi. Check for any recent product change notifications or process updates that may affect specifications or availability before finalizing procurement decisions.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a small outline package. Ensure the 50 V voltage rating and 100 mA current capacity meet circuit requirements. Verify that the 10 kOhm base resistance aligns with the driving source impedance and desired switching speed characteristics for the specific application design.

Part Context

This component belongs to the NSBC114YPDXV6 series of digital transistors manufactured by onsemi. It is part of a family of Bias Resistor Transistors designed to simplify circuit design by integrating passive components. The SOT-563-6 package provides a compact footprint suitable for modern high-density PCB layouts.