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The NSVBC115EPDXV6T1G is a complementary Bias Resistor Transistor (BRT) containing monolithic NPN and PNP transistors with integrated bias resistor networks. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features an input resistor (R1) of 100 kOhms and a resistor ratio (R1/R2) of 1.0. Packaged in SOT-563, it supports junction temperatures from -55°C to +150°C. Total device dissipation reaches 500 mW when both junctions are heated at 25°C ambient.
Verify the specific ordering suffix 'NSV' indicates compliance with automotive site and control change requirements. Confirm package type matches SOT-563 specifications. Ensure application conditions remain within the stated thermal and electrical limits defined in the datasheet.
Select this part for designs requiring a matched NPN/PNP pair with fixed 100 kOhm base resistors. Verify that the 50 Vdc voltage rating and 100 mA current capacity meet circuit demands. Consider the SOT-563 footprint constraints during layout planning.
This component belongs to the NSBC115EPDXV6 series of digital transistors manufactured by onsemi. It serves as a direct replacement for separate transistor and resistor networks, offering a compact solution for signal switching and logic interface applications.
Direct substitutes include MUN5336DW1T1G and NSVMUN5336DW1T1G. These alternatives utilize the SOT-363 package instead of SOT-563. Verify pin compatibility and thermal characteristics before implementation.