NSVBC115EPDXV6T1G

NSVBC115EPDXV6T1G

$0.33
  • Description:SS SOT563 RSTR XSTR TR
  • Series:-

SKU:0fcaa0f7df8f Category: Brand:

  
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Product Detailed Parameters

  • Description:SS SOT563 RSTR XSTR TR
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):100kOhms
  • Resistor - Emitter Base (R2):100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:187mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSVBC115EPDXV6T1G

Overview

The NSVBC115EPDXV6T1G is a complementary Bias Resistor Transistor (BRT) containing monolithic NPN and PNP transistors with integrated bias resistor networks. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features an input resistor (R1) of 100 kOhms and a resistor ratio (R1/R2) of 1.0. Packaged in SOT-563, it supports junction temperatures from -55°C to +150°C. Total device dissipation reaches 500 mW when both junctions are heated at 25°C ambient.

Feature Summary

  • Integrates NPN and PNP transistors with monolithic bias resistors to replace discrete components
  • AEC-Q101 qualified for automotive applications requiring unique site and control change requirements
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant construction

Applications

  • Automotive systems requiring AEC-Q101 qualification
  • Applications necessitating reduced board space and component count
  • Circuit designs utilizing complementary transistor switching

Procurement Notes

Verify the specific ordering suffix 'NSV' indicates compliance with automotive site and control change requirements. Confirm package type matches SOT-563 specifications. Ensure application conditions remain within the stated thermal and electrical limits defined in the datasheet.

Selection Notes

Select this part for designs requiring a matched NPN/PNP pair with fixed 100 kOhm base resistors. Verify that the 50 Vdc voltage rating and 100 mA current capacity meet circuit demands. Consider the SOT-563 footprint constraints during layout planning.

Part Context

This component belongs to the NSBC115EPDXV6 series of digital transistors manufactured by onsemi. It serves as a direct replacement for separate transistor and resistor networks, offering a compact solution for signal switching and logic interface applications.

Replacement Considerations

Direct substitutes include MUN5336DW1T1G and NSVMUN5336DW1T1G. These alternatives utilize the SOT-363 package instead of SOT-563. Verify pin compatibility and thermal characteristics before implementation.

NSVBC115EPDXV6T1GNSVBC115EPDXV6T1G
$0.33
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