NSVBC123JDXV6T1G

NSVBC123JDXV6T1G

$0.09
  • Description:SS SOT563 SRF MT RST XSTR
  • Series:-

SKU:f4f4708e8f0d Category: Brand:

  
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Product Detailed Parameters

  • Description:SS SOT563 SRF MT RST XSTR
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:357mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSVBC123JDXV6T1G

Overview

The NSVBC123JDXV6T1G is a digital transistor array manufactured by onsemi, integrating one NPN and one PNP pre-biased bipolar junction transistor within a single SOT-563 surface-mount package. This dual configuration provides a compact solution for replacing discrete components and external biasing resistor networks. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. It features an internal base resistor (R1) of 47kΩ and an emitter resistor (R2) of 47kΩ to facilitate direct logic interface. Designed for high-speed switching applications, the component offers low saturation voltage and simplified circuit design through its integrated biasing structure.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in biasing resistors into a single compact package
  • Simplifies circuit design by eliminating the need for external discrete biasing resistor networks
  • Provides high-speed switching capability with low saturation voltage characteristics

Applications

  • General-purpose switching circuits in consumer electronics
  • Driver stages for relays, solenoids, and small motors
  • Logic level shifting and buffer interfaces between microcontrollers and peripheral devices

Procurement Notes

Verify the specific suffix 'T1G' against the manufacturer's latest documentation to confirm RoHS compliance status and lead time requirements. Confirm that the SOT-563 package dimensions match the target PCB footprint constraints. Ensure the ordering quantity aligns with the standard reel packaging specifications provided by authorized distributors.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a minimal footprint. The 47kΩ base resistance is suitable for standard logic families; verify input drive levels to ensure adequate base current. Consider thermal dissipation limits if operating near the maximum power rating in enclosed environments.

Part Context

This part belongs to the NSBC series of dual digital transistors from onsemi. It shares the same functional architecture as the NSBC123EPDXV6T1G but utilizes different internal resistor values. The SOT-563 package allows for space-efficient designs compared to discrete component solutions, making it a common choice for portable and densely packed electronic assemblies.

Replacement Considerations

Direct substitutes include the NSBC123EPDXV6T1G, which offers identical pinout and functionality with potentially updated manufacturing revisions. Cross-brand equivalents such as the PEMD2 from Nexperia provide similar dual digital transistor configurations in compatible packages.

NSVBC123JDXV6T1GNSVBC123JDXV6T1G
$0.09
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