NSVBC123JDXV6T5G

NSVBC123JDXV6T5G

  • Description:SS SOT563 SRF MT RST XSTR
  • Series:-

SKU:3f2981dd7a84 Category: Brand:

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Product Detailed Parameters

  • Description:SS SOT563 SRF MT RST XSTR
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:500mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

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NSVBC123JDXV6T5G

Overview

The NSVBC123JDXV6T5G is a dual NPN digital transistor from onsemi, housed in an SOT-563 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce component count. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Typical input resistance values are provided for base and emitter configurations, facilitating direct interface with logic outputs. The unit operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 357 mW, suitable for compact digital switching applications.

Feature Summary

  • Integrates dual NPN transistors with pre-bias resistors to minimize external components
  • Designed for high-speed digital switching with low saturation voltage characteristics
  • Utilizes compact SOT-563 packaging for efficient space-saving board layouts

Applications

  • General-purpose digital switching in consumer electronics
  • Interface circuits between microcontrollers and peripheral loads
  • Level shifting and buffer stages in embedded systems

Procurement Notes

Verify the specific suffix JDXV6T5G against official onsemi documentation to confirm exact resistor ratios and tape-and-reel specifications. Ensure compatibility with standard SMT assembly processes for the SOT-563 footprint. Cross-reference the AEC-Q101 qualification status if automotive reliability requirements apply to the target application environment.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for signal switching or buffering. Compare typical input resistance values against the driving source impedance to ensure adequate base current. Evaluate the thermal performance within the enclosure to maintain junction temperatures within the specified operational limits during continuous duty cycles.

Part Context

This part belongs to the NSBC series of dual digital transistors manufactured by onsemi. The series offers various resistor ratio options to suit different drive conditions. The SOT-563 package provides a six-terminal solution that consolidates two complete transistor circuits into a single small outline form factor, enhancing integration density compared to discrete arrangements.

Replacement Considerations

Check for pin-compatible alternatives such as the NSBC123EDXV6T1G or NSBC143TDXV6T5G, ensuring identical VCEO, IC ratings, and resistor values. Verify that any substitute maintains the same SOT-563 footprint and electrical characteristics to avoid redesigning the PCB layout or adjusting bias networks.

NSVBC123JDXV6T5GNSVBC123JDXV6T5G

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