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The NSVBC143JPDXV6T1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, designed to replace discrete transistors and external bias networks. It integrates an NPN transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device is housed in a SOT-563 surface-mount package and meets AEC-Q101 automotive qualification standards. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 357 mW. The typical input resistance is 4.7 kOhms, with a minimum DC current gain (hFE) of 160. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'JPD' against official datasheets to confirm pinout and internal resistance values, as variations exist within the BRT family. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to ordering. Ensure the component matches the required thermal and electrical specifications for the target application environment.
Select this component when a compact solution for NPN switching with built-in biasing is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the SOT-563 package dimensions for PCB layout constraints. Ensure compatibility with the intended operating temperature range of -55°C to +150°C.
This part belongs to the DTC143TP series of digital transistors from onsemi. These devices are engineered to reduce component count and assembly time by integrating bias resistors directly with the transistor die. The series offers various configurations and resistance values to suit different logic families and switching speeds.
Compatible substitutes include NSBC143EDXV6T1G and NSBC143TDXV6T1G, provided the pinout and electrical characteristics match the design requirements. Verify equivalent performance metrics before substitution.