NSVBC847BDW1T2G

Overview

The NSVBC847BDW1T2G is a dual NPN general-purpose transistor manufactured by onsemi, housed in an SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device has a total power dissipation of 380 mW at 25°C and operates within a junction temperature range of -55°C to +150°C. It meets AEC-Q101 qualification standards with PPAP capability for automotive applications.

Feature Summary

• Dual NPN configuration designed for low-power surface mount applications
• AEC-Q101 qualified and PPAP capable for automotive use
• Lead-free, halogen-free, and BFR-free construction

Applications

• General purpose amplifier circuits
• Automotive electronics requiring unique site control changes
• Low power surface mount designs

Procurement Notes

Verify the component against official datasheet specifications before integration. Confirm that the NSV prefix indicates compliance with specific automotive quality requirements and site control change protocols as defined by the manufacturer. Ensure compatibility with standard surface mount assembly processes.

Selection Notes

Select this component when a dual NPN transistor is required for space-constrained designs. The SOT-363 package offers a compact footprint suitable for high-density PCB layouts. Consider the 45 V breakdown voltage and 100 mA current limits to ensure adequate headroom for the intended circuit operation.

Part Context

This part belongs to the BC847BDW1 series of dual general-purpose transistors. It shares electrical characteristics with other variants in the family but is distinguished by its NSV prefix, which denotes automotive qualification and specific manufacturing controls. It serves as a compact solution for replacing discrete single transistors in dual-channel applications.

Replacement Considerations

NSVBC847BDW1T1G