NSVBC848CDW1T1G

Overview

The NSVBC848CDW1T1G is a dual NPN small-signal transistor housed in an SOT-363 (SC-88) surface-mount package. It features a collector-emitter voltage of 30 V, a continuous collector current of 100 mA, and a total device dissipation of 250 mW at 25°C. The component has a minimum DC current gain of 420 at IC = 2.0 mA and VCE = 5.0 V. It operates within a junction temperature range of -55°C to +150°C and meets AEC-Q101 qualification standards.

Feature Summary

• Dual NPN configuration designed for general-purpose amplifier applications
• AEC-Q101 qualified with PPAP capability for automotive requirements
• Lead-free, halogen-free, and BFR-free construction

Applications

• General purpose amplifier circuits
• Automotive electronics requiring unique site control changes
• Low power surface mount applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance with automotive quality standards such as AEC-Q101 and PPAP capabilities. Ensure that the selected variant matches the required pinout style and thermal characteristics for the intended application environment.

Selection Notes

Select this component when a dual NPN array is required in a compact SOT-363 footprint. Consider the 30 V collector-emitter breakdown voltage and 100 mA maximum current limits during circuit design. Verify that the high DC current gain meets the amplification requirements of the target application.

Part Context

This part belongs to the BC848 series of dual NPN transistors manufactured by onsemi. It shares the same electrical specifications as the discontinued BC848CDW1T1G but includes the NSV prefix to denote automotive-grade manufacturing controls and site-specific production requirements.

Replacement Considerations

The BC848CDW1T1G is listed as discontinued in the datasheet. The NSVBC848CDW1T1G serves as the direct automotive-grade replacement with identical electrical parameters and pinout compatibility.