NSVEMD4DXV6T1G

NSVEMD4DXV6T1G

  • Description:TRANS NPN/PNP DUAL BRT SOT563
  • Series:EMD

SKU:207a9c11a3c6 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN/PNP DUAL BRT SOT563
  • Series:EMD
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:357mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563

Download product information

NSVEMD4DXV6T1G

Overview

The NSVEMD4DXV6T1G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SOT-563 surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA per device. The unit includes an integrated monolithic bias network with typical input resistors of 10 kΩ and a resistor ratio of 0.21. Designed for high reliability, it operates across a temperature range of -55 °C to +150 °C with a power dissipation rating of 500 mW.

Feature Summary

  • Integrates complementary NPN and PNP transistors with embedded biasing networks into a compact footprint
  • Eliminates external discrete components by combining transistors and resistors in a single monolithic structure
  • Supports wide operating temperature ranges suitable for demanding industrial environments

Applications

  • General-purpose switching applications requiring complementary logic levels
  • Driver circuits for low-power loads such as LEDs or relays
  • Logic level shifting between different voltage domains

Procurement Notes

Verify the specific suffix T1G against official datasheets to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the ordering part number matches the required pinout configuration for the SOT-563 package. Cross-reference the manufacturer's latest documentation to confirm availability status and any potential lifecycle changes before finalizing procurement plans.

Selection Notes

Select this component when space constraints require a dual complementary transistor solution with integrated base biasing. The 50 V rating and 100 mA current capability suit low-to-medium power switching tasks. Verify that the 10 kΩ internal resistance aligns with the driving source impedance requirements for the target application circuit design.

Part Context

This component belongs to onsemi's EMD series of digital transistors, which are designed to replace multiple discrete components. The SOT-563 package provides a small outline technology ideal for dense printed circuit board layouts. The dual configuration allows for efficient implementation of push-pull or differential driver stages without increasing the bill of materials.

Replacement Considerations

Compatible substitutes include the EMD4DXV6T1G and EMD4DXV6T5G, which share identical electrical characteristics and pin configurations. Verify that alternative sources maintain the same SOT-563 footprint and thermal performance ratings to ensure direct interchangeability in existing designs.

NSVEMD4DXV6T1GNSVEMD4DXV6T1G

Click on the inquiry