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The NSVEMD4DXV6T1G is a dual Bias Resistor Transistor (BRT) from onsemi, integrating one NPN and one PNP bipolar junction transistor within a single SOT-563 surface-mount package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA per device. The unit includes an integrated monolithic bias network with typical input resistors of 10 kΩ and a resistor ratio of 0.21. Designed for high reliability, it operates across a temperature range of -55 °C to +150 °C with a power dissipation rating of 500 mW.
Verify the specific suffix T1G against official datasheets to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the ordering part number matches the required pinout configuration for the SOT-563 package. Cross-reference the manufacturer's latest documentation to confirm availability status and any potential lifecycle changes before finalizing procurement plans.
Select this component when space constraints require a dual complementary transistor solution with integrated base biasing. The 50 V rating and 100 mA current capability suit low-to-medium power switching tasks. Verify that the 10 kΩ internal resistance aligns with the driving source impedance requirements for the target application circuit design.
This component belongs to onsemi's EMD series of digital transistors, which are designed to replace multiple discrete components. The SOT-563 package provides a small outline technology ideal for dense printed circuit board layouts. The dual configuration allows for efficient implementation of push-pull or differential driver stages without increasing the bill of materials.
Compatible substitutes include the EMD4DXV6T1G and EMD4DXV6T5G, which share identical electrical characteristics and pin configurations. Verify that alternative sources maintain the same SOT-563 footprint and thermal performance ratings to ensure direct interchangeability in existing designs.