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Product Detailed Parameters
- Description：TRANS NPN/PNP DUAL BRT SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- Transistor Type：1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms, 10kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：500mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
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Overview
The NSVEMD4DXV6T5G is a dual complementary digital transistor from onsemi, integrating one NPN and one PNP bipolar junction transistor with built-in bias resistors in a single SOT-563 package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes typical input resistors of 10 kΩ with a resistor ratio of 0.21. Power dissipation is rated at 500 mW, and the unit operates within a temperature range of -55°C to +150°C. Minimum DC current gain (hFE) is specified at 80.
Feature Summary
- Integrates complementary NPN and PNP transistors with pre-biased resistors for simplified circuit design.
- Provides high-density packaging in a compact SOT-563 surface-mount footprint.
- Supports wide operating temperature ranges suitable for industrial applications.
Applications
- General-purpose switching circuits requiring complementary logic levels.
- Driver stages for low-power loads in consumer electronics.
- Interface buffering in embedded systems.
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Check for end-of-life notifications or obsolescence notices from onsemi before finalizing procurement plans. Ensure storage conditions meet moisture sensitivity level requirements.
Selection Notes
Select this component when a matched NPN/PNP pair with integrated biasing is required. Compare input resistance values against drive source capabilities. Verify power dissipation limits under worst-case thermal conditions. Ensure the SOT-563 package fits the available PCB real estate constraints.
Part Context
This part belongs to onsemi's EMD series of digital transistors. It shares functional similarities with other EMD4DXV6 variants but may differ in packaging or specific electrical tolerances. The 'NSV' prefix often denotes automotive or specialized qualification grades within the broader product family.
Replacement Considerations
Direct substitutes include EMD4DXV6T5G and EMD4DXV6T1G. Verify pinout compatibility and electrical parameter equivalence before substitution. Cross-reference with EMD5DXV6T5G for similar functionality in different packages.
