NSVF4009SG4T1G

Overview

The NSVF4009SG4T1G is an NPN bipolar RF transistor manufactured by onsemi, designed for high-frequency applications. It features a maximum collector current of 40mA and a collector-emitter breakdown voltage of 3.5V. The device operates with a transition frequency of 25GHz and delivers a typical gain of 17dB. Power dissipation is rated at 120mW, with a noise figure of 1.1dB at 2GHz. It is housed in a compact SC-82FL/MCPH4 surface-mount package and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards
• High-speed RF performance with 25GHz transition frequency
• Low noise characteristics suitable for sensitive signal chains
• Compact SC-82FL surface-mount packaging for space-constrained designs

Applications

• RF front-end modules in automotive communication systems
• Low-noise amplification stages in wireless infrastructure
• Signal processing circuits requiring high-frequency operation

Procurement Notes

Verify the complete part number including suffixes to ensure correct packaging and automotive grade compliance. Confirm RoHS3 status and REACH declaration requirements against specific project regulations. Check datasheet revisions for any parameter updates before finalizing design specifications.

Selection Notes

Select this component when a low-voltage, high-frequency NPN transistor is required for RF applications. Ensure the 3.5V breakdown voltage aligns with the circuit supply rails. Consider the 120mW power dissipation limit for thermal management in the chosen enclosure.

Part Context

This device belongs to the NSVF4009 series of RF transistors from onsemi. It is specifically engineered for high-frequency analog and RF switching applications. The series emphasizes low noise and high linearity within a small form factor, targeting modern electronic systems.

Replacement Considerations

NSVF4015SG4T1G is listed as a manufacturer-recommended alternative.