NSVMUN5111DW1T3G

Overview

The NSVMUN5111DW1T3G is a dual PNP digital transistor manufactured by onsemi, housed in an SOT-363-6 surface-mount package. It integrates two pre-biased transistors with a typical input resistance of 10 kOhms and a resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 385 mW. The device features a minimum DC current gain (hFE) of 35 and an output voltage of 200 mV. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification for automotive applications.

Feature Summary

• Dual PNP configuration with integrated biasing resistors
• AEC-Q101 qualified for automotive reliability standards
• Compact SOT-363-6 surface-mount packaging

Applications

• Automotive circuit switching
• General-purpose digital buffering
• Logic level translation

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct tape-and-reel specifications. Confirm that the component meets required automotive quality standards if deployed in vehicle systems. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP digital transistor solution is required in a compact SOT-363-6 footprint. Ensure the design accommodates the 50 V collector-emitter voltage rating and 100 mA continuous current limit. Verify thermal management capabilities for the 385 mW power dissipation requirement within the target operating temperature range.

Part Context

This part belongs to the MUN5111DW1 series of pre-biased transistors from onsemi. It serves as a compact alternative to discrete resistor-transistor networks, simplifying PCB layout. The SOT-363-6 package provides space efficiency for high-density electronic designs requiring dual PNP switching functions.

Replacement Considerations

NSVMUN5214DW1T3G