NSVMUN5214DW1T3G

NSVMUN5214DW1T3G

$0.23
  • Description:TRANS NPN 50V DUAL BIPO SC88-6
  • Series:-

SKU:6205ca998354 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 50V DUAL BIPO SC88-6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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NSVMUN5214DW1T3G

Overview

The NSVMUN5214DW1T3G is a dual NPN pre-biased transistor array manufactured by onsemi, housed in an SOT-363 surface-mount package. It integrates two NPN transistors with built-in biasing resistors: R1 (base) at 10 kΩ and R2 (emitter) at 47 kΩ. Key electrical specifications include a maximum collector-emitter voltage of 50V, a continuous collector current of 100mA, and a total power dissipation of 250mW. The device exhibits a low saturation voltage of 250mV at 300µA base current and 10mA collector current, with a minimum DC current gain of 80 at 5mA/10V. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

  • Dual NPN configuration with integrated base and emitter resistors simplifies circuit design by reducing component count and board space.
  • Automotive-grade qualification ensures reliability and performance consistency under stringent environmental conditions.
  • Low saturation voltage characteristics enable efficient switching operations with minimal power loss in the active state.

Applications

  • Automotive logic circuits and signal switching
  • General-purpose digital switching in consumer electronics
  • Interface driving for microcontrollers and logic gates

Procurement Notes

Verify the specific ordering suffix DW1T3G to confirm the SOT-363 package and tape-and-reel quantity. Confirm AEC-Q101 automotive qualification status if required for your application. Check RoHS compliance documentation for material declarations. Ensure the supplier provides valid traceability records for batch control.

Selection Notes

Select this component when a compact dual NPN solution with fixed biasing is needed. The 10kΩ base resistor suits standard logic levels. Verify that the 50V rating exceeds your circuit's peak voltage. Consider the 250mW thermal limit for power dissipation calculations in enclosed spaces.

Part Context

This part belongs to the MUN5214 series of pre-biased transistors from onsemi. It is designed as a drop-in replacement for discrete resistor-transistor networks. The SOT-363 package allows for high-density PCB layouts compared to larger through-hole alternatives.

Replacement Considerations

Check datasheets for equivalent parts like BC847B with external resistors or other dual NPN arrays such as DTC143EUA. Ensure pinout compatibility and matching electrical parameters before substitution.

NSVMUN5214DW1T3GNSVMUN5214DW1T3G
$0.23
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