NSVMUN531335DW1T3G

NSVMUN531335DW1T3G

$0.23
  • Description:TRANS PREBIAS NPN/PNP 50V SC88
  • Series:-

SKU:8699aa304755 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN/PNP 50V SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms, 2.2kOhms
  • Resistor - Emitter Base (R2):47kOhms, 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:385mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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NSVMUN531335DW1T3G

Overview

The NSVMUN531335DW1T3G is an AEC-Q101 qualified digital transistor array manufactured by onsemi. It integrates one NPN and one PNP pre-biased transistor within a compact SOT-363 (SC-88) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA, with a power dissipation rating of 385mW. Internal biasing resistors are configured as 47kΩ/2.2kΩ for the NPN section and 47kΩ/47kΩ for the PNP section. Key electrical characteristics include a DC current gain (hFE) of at least 80 at 5mA and 10V, a saturation voltage of 250mV at 300µA base current and 10mA collector current, and a collector cutoff current of 500nA.

Feature Summary

  • Automotive-grade reliability certified under AEC-Q101 standards for robust performance in demanding environments.
  • Dual-channel configuration combining one NPN and one PNP pre-biased transistor to reduce external component count.
  • Integrated internal biasing resistors simplify circuit design by eliminating the need for discrete base resistors.

Applications

  • Automotive electronic systems requiring qualified switching components.
  • General-purpose logic level translation and signal switching applications.
  • Driver circuits for low-power loads such as LEDs or relays.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q101 qualification status aligns with automotive project requirements. Cross-reference the SC-88/SOT-363 footprint dimensions during PCB layout to guarantee mechanical compatibility. Ensure compliance with RoHS directives if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a dual NPN/PNP digital switch is required in a minimal footprint. The integrated resistor network reduces board space and simplifies schematic design compared to discrete solutions. Verify that the 50V voltage rating and 100mA current capacity meet the load requirements. Consider the thermal performance of the SOT-363 package relative to the expected power dissipation in the application environment.

Part Context

This part belongs to the MUN531335DW series of digital transistors from onsemi. It is specifically designed for applications needing compact, high-density switching solutions. The 'NS' prefix typically denotes automotive-grade variants, while the 'DW1' suffix indicates the specific SOT-363 package and internal resistor values. This series is widely used in consumer electronics and automotive modules where space constraints are critical.

Replacement Considerations

Direct substitutes must match the SOT-363 package, 50V rating, and identical internal resistor configurations (47k/2.2k for NPN; 47k/47k for PNP). Verify pinout compatibility to prevent circuit damage during replacement. Check for equivalent AEC-Q101 certification if the application mandates automotive qualification. Consult manufacturer cross-reference lists for verified alternatives.

NSVMUN531335DW1T3GNSVMUN531335DW1T3G
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