NSVMUN5316DW1T1G

Overview

The NSVMUN5316DW1T1G is a dual digital transistor array manufactured by onsemi, featuring one NPN and one PNP bipolar junction transistor (BJT) with monolithic bias resistor networks. It is housed in a SC-88 (SOT-363) surface-mount package with six pins. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. Key electrical parameters include a minimum DC current gain (hFE) of 160 at 5 mA and 10 V, a base resistance (R1) of 4.7 kΩ, and a power dissipation rating of 250 mW. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in bias resistors into a single compact component.
• Designed to replace discrete transistor-resistor combinations, reducing printed circuit board space and component count.
• Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.

Applications

• Automotive logic circuits and switching applications
• General-purpose digital switching and level shifting
• Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and compliance status. Confirm that the AEC-Q101 qualification aligns with project requirements. Check for any recent product change notices regarding manufacturing location or material composition updates before finalizing procurement plans.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated biasing is required in a minimal footprint. Ensure the 50V voltage rating and 100mA current limit meet the circuit's operational demands. Consider the SC-88 package dimensions for PCB layout constraints and verify thermal management capabilities given the 250mW power dissipation limit.

Part Context

This part belongs to the MUN5316 series of dual bias resistor transistors from onsemi. These devices are engineered to simplify circuit design by combining two transistors and their associated biasing resistors into one monolithic structure. The series offers various resistance configurations to suit different logic families and drive requirements.

Replacement Considerations

Compatible substitutes include other dual digital transistors with matching NPN/PNP configurations and similar electrical ratings, such as those from Rohm or Diodes Inc., provided they fit the SC-88 package and meet the 50V/100mA specifications.