NSVMUN5331DW1T1G

NSVMUN5331DW1T1G

$0.23
  • Description:TRANS NPN/PNP 50V BIPO SC88
  • Series:-

SKU:7e73a0090375 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V BIPO SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms
  • Resistor - Emitter Base (R2):2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:250mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363

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NSVMUN5331DW1T1G

Overview

The NSVMUN5331DW1T1G is a dual digital transistor from onsemi, featuring one NPN and one PNP pre-biased element in an SOT-363 (SC-88) surface-mount package. It integrates monolithic bias resistor networks to replace discrete components. Key electrical parameters include a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V. The device has a maximum power dissipation of 250 mW and includes built-in resistors R1 and R2, both specified at 2.2 kΩ. It meets AEC-Q101 automotive qualification standards.

Feature Summary

  • Integrates dual NPN and PNP transistors with built-in bias resistors for simplified circuit design
  • Automotive-grade reliability certified under AEC-Q101 standards
  • Compact SOT-363 surface-mount packaging suitable for space-constrained applications

Applications

  • Automotive logic switching circuits
  • Battery management system control interfaces
  • General-purpose digital buffering in automotive electronics

Procurement Notes

Verify the specific suffix DW1T1G against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides traceability documentation required for automotive supply chains. Confirm RoHS compliance status matches project requirements before finalizing orders.

Selection Notes

Select this component when a complementary NPN/PNP pair with integrated base resistors is needed. The 2.2 kΩ internal resistance values determine the input drive characteristics. Verify that the 50 V breakdown voltage and 100 mA current limits exceed the target application's peak operating conditions.

Part Context

This part belongs to the MUN5331 series of bias resistor transistors. The 'NSV' prefix typically denotes automotive-grade variants within onsemi's portfolio. It serves as a direct replacement for discrete resistor-transistor combinations in signal processing and switching roles.

Replacement Considerations

Check equivalent parts from other manufacturers offering identical 2.2 kΩ/2.2 kΩ resistor configurations in SOT-363 packages. Verify pin compatibility and thermal performance metrics before substitution.

NSVMUN5331DW1T1GNSVMUN5331DW1T1G
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