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The onsemi NSVMUN5334DW1T1G is a complementary Bias Resistor Transistor (BRT) containing one NPN and one PNP transistor with monolithic bias resistor networks. It operates in an SOT-363 package with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device features a typical input resistor R1 of 22 kOhms and a resistor ratio R1/R2 of 0.47. Thermal dissipation reaches 187 mW for one junction heated at 25°C ambient, with a junction temperature range from -55 to +150 °C.
Verify the specific ordering suffix against official documentation to confirm packaging orientation and tape specifications. Confirm that the NSV prefix aligns with project requirements for AEC-Q101 qualification and PPAP capability. Ensure the selected variant matches the required SOT-363 pinout style defined in the datasheet.
Select this component when a complementary NPN/PNP pair with integrated biasing is required in a compact surface-mount footprint. Evaluate thermal resistance values based on whether one or both junctions are active during operation. Verify that the 22 kOhm input resistance meets the drive requirements of the controlling logic interface.
This part belongs to the MUN5334DW1 series of complementary BRTs manufactured by onsemi. It shares functional characteristics with other devices in the DTC124XP family but utilizes the SOT-363 package. The NSV prefix indicates compliance with automotive quality standards and specific manufacturing site controls.
Direct substitutes include the MUN5334DW1T1G. Verify pin compatibility and electrical parameters before swapping.