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The NSVMUN5336DW1T1G is a complementary digital transistor from onsemi, featuring dual NPN and PNP transistors with monolithic bias resistor networks in an SOT-363 package. It operates with a maximum collector-emitter voltage of 50 V and continuous collector current of 100 mA. The device includes typical input resistors of 100 kOhms with a ratio of 1. It has a minimum DC collector/base gain (hFE) of 150, power dissipation of 385 mW, and an emitter-base voltage of 6 V. Qualified under AEC-Q101, it functions between -55°C and +150°C.
Verify the specific ordering suffix DW1T1G against official onsemi documentation to confirm package type and reel specifications. Ensure the AEC-Q101 qualification status aligns with project requirements. Confirm RoHS compliance details directly from the manufacturer's declaration. Cross-reference the part number with authorized distributors to avoid counterfeit components.
Select this component when a complementary pair of pre-biased transistors is required in a compact SOT-363 footprint. The 100 kOhm base resistance suits general-purpose digital switching. Verify that the 50 V rating and 100 mA current capacity meet the load requirements. Consider the thermal dissipation limits for high-temperature environments up to 150°C.
This part belongs to the MUN5336DW1 series of Bias Resistor Transistors (BRT). It replaces discrete transistor and resistor networks, reducing assembly complexity. The 'NSV' prefix indicates automotive-grade qualification. The device integrates two transistors and four resistors into a single six-pin package.
Direct pin-compatible alternatives include other complementary BRTs in SOT-363 packages with similar electrical characteristics. Verify resistor values and hFE ranges match the original design requirements before substitution.