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The NSVMUN5338DW1T3G is a dual pre-biased transistor array manufactured by onsemi, housed in an SC-88 (SOT-363) surface-mount package. It integrates one NPN and one PNP bipolar junction transistor with internal biasing resistors to replace discrete components. The device features a maximum collector-emitter voltage of 50V for both transistors and a continuous collector current rating of 100mA. Internal base resistances are specified at 4.7 kΩ for the NPN section and 4.7 kΩ for the PNP section. The unit operates within a temperature range of -55°C to +150°C and is qualified under AEC-Q101 standards for automotive applications.
Verify the complete part number including the suffix DW1T3G to ensure correct packaging and tape-and-reel specifications. Confirm that the AEC-Q101 automotive qualification aligns with the target application requirements. Check for RoHS compliance status prior to integration into environmentally regulated assemblies.
Select this component when a compact solution requires simultaneous NPN and PNP switching capabilities with fixed biasing. Ensure the 50V voltage rating exceeds the maximum circuit potential. Verify that the SC-88 package dimensions fit the available footprint constraints compared to larger alternatives.
This part belongs to the MUN5300 series of dual bias resistor transistors from onsemi. The series provides complementary configurations to simplify driver stages. The specific model utilizes the SC-88 package, offering a small form factor suitable for dense PCB layouts in consumer and industrial electronics.
Direct substitutes include other MUN5338 variants from different manufacturers or alternative packages like SOT-363 equivalents. Verify pinout compatibility and electrical parameters such as hFE and Vce(sat) before substitution.