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Product Detailed Parameters
- Description：TRANS 2PNP 65V 100MA SC88/SC70
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：65V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：380mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The NSVT65010MW6T1G is a dual matched PNP bipolar junction transistor housed in an SOT-363 package. It features a collector-emitter voltage (VCEO) of -65 V, a collector-base voltage (VCBO) of -80 V, and an emitter-base voltage (VEBO) of -5.0 V. The device supports a continuous collector current of -100 mA with a total power dissipation of 380 mW at 25 °C on an FR-5 board. Electrical characteristics include a DC current gain (hFE) ranging from 220 to 475 at -10 mA, a saturation voltage (VCE(sat)) of -650 mV max at -100 mA, and a transition frequency (fT) of 100 MHz. The operating temperature range spans from -55 °C to +150 °C.
Feature Summary
- Current gain matching within 10% between the two transistors
- Base-emitter voltage difference limited to 2 mV or less
- AEC-Q101 qualified for automotive applications
Applications
- Current mirrors
- Differential amplifiers
- Balanced amplifiers
- Mixers
- Detectors and limiters
Procurement Notes
Verify the component authenticity by checking the marking diagram against the physical package. Confirm the presence of the Pb-Free indicator and date code alignment. Ensure the ordering suffix matches the required tape and reel specifications for automated assembly processes.
Selection Notes
Select this component when precise parameter matching is critical for circuit performance. The dual matched configuration eliminates the need for external trimming components. Verify that the -65 V rating meets the system voltage requirements and that the SOT-363 package fits the available PCB space constraints.
Part Context
This part belongs to the NST65010MW6 series of dual matched general-purpose transistors. It serves as a drop-in replacement for standard discrete devices while offering superior matching characteristics. A complementary NPN equivalent, the NST65011MW6T1G, is available for designs requiring both polarities.
Replacement Considerations
The complementary NPN equivalent NST65011MW6T1G is available. Direct substitution requires verifying polarity inversion and ensuring the new component's ratings align with the original design parameters.
FAQ
What is the maximum base-emitter voltage difference between the two transistors?
The base-emitter voltage is matched to a difference of 2 mV or less.
Is this component suitable for automotive applications?
Yes, the NSV prefix indicates it is AEC-Q101 qualified and PPAP capable for automotive use.
What is the thermal resistance from junction to ambient?
The thermal resistance (RθJA) is 328 °C/W.
